FMM5805X 17.5-20ghz power amplifier mmic item symbol drain voltage v dd 10 v gate voltage v gg -3.0 v input power p in 22 dbm c storage temperature -65 to +175 t stg condition unit rating absolute maximum rating (ambient temperature ta=25 c) eudyna recommends the following conditions for the long term reliable operation of gaas fets: 1. the drain-source operating voltage (v dd ) should not exceed 6 volts. 2. the forward and reverse gate currents should not exceed 4.0 and -0.33 ma respectively. 3. this product should be hermetically packaged operating backside temperature -40 to +85 c t op 1 edition 1.1 september 2004 item symbol output return loss rlo conditions unit limits typ. max. min. electrical characteristics (ambient temperature tc=25 c) power gain at 1 db g.c.p. 16 21 26 - -8 - db input return loss rli -- -12 db db frequency range f 17.5 - 20.0 ghz output power at 1 db g.c.p. 29 31 - dbm p 1db g 1db drain current - 700 950 ma i ddrf g.c.p.: gain compression point power-added efficiency -30- % add v dd = 6v i dd = 650ma (typ.) z s = z l = 50 ? note: rf parameter sample size 10pcs./wafer. criteria (accept/reject)=(0/1) description the FMM5805X is a high-gain, high power, 3-stage mmic amplifier designed for operation in the17.5-20.0 ghz frequency range. this amplifier has an input and output designed for use in 50 ? systems.this device is well suited for point-to-point communication applications. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 31.0dbm (typ.) ?high gain: g 1db = 21.0db (typ.) ?high pae: add = 30% (typ.) ?impedance matched zin/zout = 50 ? ?0.25? phemt technology
FMM5805X 17.5-20ghz power amplifier mmic 2 output power vs. imd 18 14 12 30 16 20 22 24 26 28 -60 -65 -55 -50 -45 -40 -35 -30 -25 -20 -15 total output power (dbm) imd (dbc) vdd = 6v idd = 650ma 18ghz im3 20ghz im3 18ghz im5 20ghz im5 p1db, g1db vs. frequency 17.5 17 18 18.5 19 19.5 20 20.5 21 18 20 22 24 26 28 30 32 34 frequency (ghz) p1db (dbm), g1db (db) vdd = 6v idd = 650ma p1db g1db 220pf 220pf 220pf 220pf vdd rf out 0.15 f vgg 0.15 f vgg 0.15 f rf in vdd 0.15 f gap to be minimized at the output assembly drawing
rf in vgg1 vdd2 vdd4 vdd1 rf out vdd3 vdd5 vgg2 FMM5805X 17.5-20ghz power amplifier mmic 3 s-parameters v dd = 6v, i ds = 650ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 14000 .672 144.5 3.454 165.4 .006 -90.6 .821 114.2 14500 .596 138.7 4.871 134.6 .006 -84.4 .754 102.2 15000 .502 133.1 7.047 106.3 .006 -90.4 .659 87.0 15500 .402 132.5 7.936 68.9 .008 -101.5 .536 67.3 16000 .297 136.1 11.029 28.2 .007 -95.3 .399 34.4 16500 .225 147.8 12.663 -13.5 .007 -96.5 .316 -19.3 17000 .212 169.1 12.727 -58.7 .008 -93.8 .357 -77.0 17500 .256 -172.7 12.061 -97.8 .008 -90.3 .471 -117.9 18000 .321 -169.9 11.271 -133.1 .009 -92.5 .555 -144.7 18500 .364 -169.8 10.470 -167.0 .010 -92.2 .585 -163.0 19000 .405 -172.0 10.272 159.4 .010 -100.8 .578 -178.4 19500 .440 -179.7 9.732 129.4 .010 -109.5 .533 170.5 20000 .458 173.4 9.580 92.7 .009 -107.3 .471 162.5 20500 .431 161.5 9.979 55.9 .007 -115.9 .388 156.4 21000 .328 145.7 10.109 14.0 .007 -110.0 .325 156.3 21500 .116 138.9 9.421 -36.9 .006 -91.9 .282 158.9 22000 .209 -112.3 7.116 -92.0 .007 -84.0 .224 165.0 22500 .457 -133.3 4.684 -139.4 .009 -73.9 .186 178.1 23000 .598 -154.3 2.873 176.7 .011 -77.9 .162 -165.7 bonding layout
FMM5805X 17.5-20ghz power amplifier mmic 4 chip outline unit: m 0 3470 chip size: 3.47 30 m x 2.63 30 m vgg1, vgg2: one bonding is available chip thickness: 70 20 m pad dimensions: 1. dc 80 m x 80 m 2. rf 120 m x 80 m 1115 2250 2520 2630 0 0 rf in rf out 0 vdd5 2940 vgg2 2210 110 vdd3 vgg2 110 170 vgg1 110 vdd1 vgg1 680 vdd2 1160 vgg1 2210 1315 2395 2460 235 vdd4 3360 2940 710 1160 710 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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